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B79

B79

Shikues

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Products Specifications
Transition Frequency (fT)200MHz
Operating Temperature+150u2103@(Tj)
Transistor TypePNP
DC Current Gain (hFE@Ic,Vce)135@100mA,1V
Power Dissipation (Pd)1W
Collector Current (Ic)1A
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)500mV@800mA,80mA
Collector-Emitter Breakdown Voltage (Vceo)25V
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