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DMN2016LHAB-7

DMN2016LHAB-7

Diodes Incorporated

MOSFET 2N-CH 20V 7.5A 6UDFN

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Products Specifications
Min Operating Temperature-55 °C
MountSurface Mount
Fall Time12 ns
RoHSCompliant
Radiation HardeningNo
Drain to Source Voltage (Vdss)20 V
Drain to Source Resistance30 mΩ
Element ConfigurationDual
Number of Channels2
Number of Pins6
Height600 µm
Input Capacitance1.55 nF
Width3.05 mm
Rds On Max15.5 mΩ
Max Power Dissipation1.2 W
Drain to Source Breakdown Voltage20 V
Gate to Source Voltage (Vgs)12 V
REACH SVHCNo SVHC
Turn-On Delay Time6.9 ns
Max Operating Temperature150 °C
Continuous Drain Current (ID)7.5 A
Rise Time15.5 ns
Length2.05 mm
Turn-Off Delay Time40.9 ns
Case/PackageDFN
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