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| RdsOn(Max)@Id | 1V @ 250µA |
|---|---|
| Vgs(th)(Max)@Id | ±8V |
| Vgs | 19 nC @ 4.5 V |
| FETFeature | 3W (Ta) |
| DraintoSourceVoltage(Vdss) | 20 V |
| OperatingTemperature | Surface Mount |
| DriveVoltage(MaxRdsOn | 2.5V, 4.5V |
| ProductStatus | Obsolete |
| Package/Case | |
| GateCharge(Qg)(Max)@Vgs | |
| Grade | |
| MountingType | SOT-223-4 |
| InputCapacitance(Ciss)(Max)@Vds | - |
| Series | PowerTrench® |
| Qualification | |
| SupplierDevicePackage | TO-261-4, TO-261AA |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Current-ContinuousDrain(Id)@25°C | 6A (Ta) |
| Vgs(Max) | 1187 pF @ 10 V |
| MinRdsOn) | 50mOhm @ 6A, 4.5V |
| Package | Tape & Reel (TR),Cut Tape (CT),Digi-Reel® |
| PowerDissipation(Max) | -55°C ~ 150°C (TJ) |
Fairchild Semiconductor
Power Field-Effect Transistor, 3.4A I(D), 30V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
