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HN4A06J(TE85L,F)

HN4A06J(TE85L,F)

Bipolar Transistors - BJT Trans LFreq -120V PNP PNP -0.1A

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Products Specifications
Collector Emitter Saturation Voltage-300 mV
MountSurface Mount
Collector Emitter Voltage (VCEO)300 mV
Gain Bandwidth Product100 MHz
RoHSCompliant
hFE Min200
Transition Frequency100 MHz
Max Collector Current100 mA
Element ConfigurationDual
Max Breakdown Voltage120 V
Emitter Base Voltage (VEBO)-5 V
PackagingDigi-Reel®
PolarityPNP
Collector Emitter Breakdown Voltage120 V
Collector Base Voltage (VCBO)-120 V
Case/PackageSOT-25
Max Power Dissipation300 mW
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