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| Voltage-CollectorEmitterBreakdown(Max) | 600 V |
|---|---|
| SwitchingEnergy | Standard |
| OperatingTemperature | Through Hole |
| ProductStatus | Obsolete |
| Package/Case | 21 ns |
| Grade | TO-220-3 |
| MountingType | 21 A |
| ReverseRecoveryTime(trr) | |
| Current-CollectorPulsed(Icm) | |
| Series | PowerMESH™ |
| Td(on/off)@25°C | 390V, 3A, 10Ohm, 15V |
| Qualification | TO-220 |
| SupplierDevicePackage | |
| InputType | 13.6 nC |
| Vce(on)(Max)@Vge | 2.5V @ 15V, 3A |
| GateCharge | 12ns/76ns |
| Current-Collector(Ic)(Max) | 15 A |
| Ic | 56 W |
| TestCondition | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Power-Max | 20µJ (on), 68µJ (off) |
| IGBTType | - |
STMicroelectronics
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB
