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| Voltage-CollectorEmitterBreakdown(Max) | 650 V |
|---|---|
| SwitchingEnergy | 170µJ (off) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| ProductStatus | Obsolete |
| Package/Case | 140 ns |
| Grade | Through Hole |
| MountingType | TO-3P |
| ReverseRecoveryTime(trr) | |
| Current-CollectorPulsed(Icm) | - |
| Series | HB |
| Td(on/off)@25°C | -/139ns |
| Qualification | TO-3P-3, SC-65-3 |
| SupplierDevicePackage | - |
| InputType | Standard |
| Vce(on)(Max)@Vge | 80 A |
| GateCharge | 120 nC |
| Current-Collector(Ic)(Max) | 40 A |
| Ic | 2V @ 15V, 20A |
| TestCondition | 400V, 20A, 10Ohm, 15V |
| Package | Tube |
| Power-Max | 168 W |
| IGBTType | Trench Field Stop |
STMicroelectronics
Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-247
STMicroelectronics
Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-247
STMicroelectronics
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-247
STMicroelectronics
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247
STMicroelectronics
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247
