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VWM200-01P

VWM200-01P

IXYS

MOSFET 6N-CH 100V 210A V2-PAK

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Products Specifications
RdsOn(Max)@Id5.2mOhm @ 100A, 10V
Vgs(th)(Max)@Id430nC @ 10V
Vgs4V @ 2mA
Configuration6 N-Channel (3-Phase Bridge)
FETFeature-
DraintoSourceVoltage(Vdss)100V
OperatingTemperatureChassis Mount
ProductStatusObsolete
Package/CaseV2-PAK
GateCharge(Qg)(Max)@Vgs-
Grade
MountingTypeV2-PAK
InputCapacitance(Ciss)(Max)@Vds-
Series-
Qualification
SupplierDevicePackage
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C210A
PackageBox
Power-Max-40°C ~ 175°C (TJ)
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