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RdsOn(Max)@Id | 5.2mOhm @ 100A, 10V |
---|---|
Vgs(th)(Max)@Id | 430nC @ 10V |
Vgs | 4V @ 2mA |
Configuration | 6 N-Channel (3-Phase Bridge) |
FETFeature | - |
DraintoSourceVoltage(Vdss) | 100V |
OperatingTemperature | Chassis Mount |
ProductStatus | Obsolete |
Package/Case | V2-PAK |
GateCharge(Qg)(Max)@Vgs | - |
Grade | |
MountingType | V2-PAK |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | - |
Qualification | |
SupplierDevicePackage | |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 210A |
Package | Box |
Power-Max | -40°C ~ 175°C (TJ) |