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1T4

1T4

onsemi

-

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Products Specifications
Transition Frequency (fT)3MHz
Operating Temperature-65u2103~+150u2103@(Tj)
Collector Cut-Off Current (Icbo)-
Transistor TypeNPN
DC Current Gain (hFE@Ic,Vce)10@3A,4V
Power Dissipation (Pd)15W
Collector Current (Ic)3A
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)1.2V@3A,375mA
Collector-Emitter Breakdown Voltage (Vceo)40V
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