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| Min Operating Temperature | -55 °C |
|---|---|
| Drain to Source Breakdown Voltage | 20 V |
| Gate to Source Voltage (Vgs) | 12 V |
| Mount | Surface Mount |
| Fall Time | 3.2 ns |
| RoHS | Compliant |
| Max Operating Temperature | 150 °C |
| Drain to Source Voltage (Vdss) | 20 V |
| Power Dissipation | 500 mW |
| Drain to Source Resistance | 1.2 Ω |
| Continuous Drain Current (ID) | 530 mA |
| Element Configuration | Dual |
| Rise Time | 5 ns |
| Turn-Off Delay Time | 5.1 ns |
| Number of Pins | 6 |
| Input Capacitance | 47 pF |
| Rds On Max | 350 mΩ |
| Case/Package | SOT-363-6 |
| Max Power Dissipation | 500 mW |
Infineon
Small Signal Field-Effect Transistor, 1.5A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-6
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Small Signal Field-Effect Transistor, 0.39A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC PACKAGE-6
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Small Signal Field-Effect Transistor, 0.95A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-6
