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| Min Operating Temperature | -55 °C |
|---|---|
| Schedule B | 8541210080 |
| Fall Time | 25 ns |
| RoHS | Compliant |
| Radiation Hardening | No |
| Drain to Source Voltage (Vdss) | -50 V |
| Drain to Source Resistance | 7.5 Ω |
| Manufacturer Lifecycle Status | RELEASED FOR SUPPLY (Last Updated: 1 day ago) |
| Lifecycle Status | Production (Last Updated: 1 day ago) |
| Number of Pins | 6 |
| Number of Elements | 2 |
| Input Capacitance | 36 pF |
| Lead Free | Lead Free |
| Rds On Max | 7.5 Ω |
| Max Power Dissipation | 500 mW |
| Drain to Source Breakdown Voltage | -50 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Turn-On Delay Time | 13 ns |
| Max Dual Supply Voltage | -50 V |
| Max Operating Temperature | 150 °C |
| Power Dissipation | 330 mW |
| Continuous Drain Current (ID) | 170 mA |
| Rise Time | 11 ns |
| Turn-Off Delay Time | 48 ns |
| Contact Plating | Tin |
| Packaging | Tape & Reel |
| Case/Package | SOT |
Infineon
Small Signal Field-Effect Transistor, 1.4A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3
INFINEON
Small Signal Field-Effect Transistor, 0.33A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC PACKAGE-3
