Min Operating Temperature | -55 °C |
---|---|
Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
Mount | Surface Mount |
Fall Time | 2.2 ns |
RoHS | Compliant |
Drain to Source Voltage (Vdss) | 30 V |
Drain to Source Resistance | 70 mΩ |
Number of Channels | 2 |
Number of Pins | 26 |
Height | 900 µm |
Input Capacitance | 422 pF |
Width | 1.6 mm |
Lead Free | Lead Free |
Rds On Max | 55 mΩ |
Max Power Dissipation | 850 mW |
Max Junction Temperature (Tj) | 150 °C |
Drain to Source Breakdown Voltage | 30 V |
Gate to Source Voltage (Vgs) | 12 V |
REACH SVHC | No SVHC |
Turn-On Delay Time | 1.7 ns |
Max Operating Temperature | 150 °C |
Power Dissipation | 850 mW |
Continuous Drain Current (ID) | 2.5 A |
Rise Time | 4.6 ns |
Length | 2.9 mm |
Turn-Off Delay Time | 18.3 ns |
Contact Plating | Gold |
Case/Package | TSOT |
Diodes Incorporated
Power Field-Effect Transistor, 2.7A I(D), 30V, 0.06ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, TSOT23, 6 PIN