Min Operating Temperature | -55 °C |
---|---|
Drain to Source Breakdown Voltage | 30 V |
Nominal Vgs | 2.5 V |
Gate to Source Voltage (Vgs) | 20 V |
Threshold Voltage | 2.5 V |
REACH SVHC | No SVHC |
Mount | Surface Mount |
RoHS | Compliant |
Weight | 73.992255 mg |
Radiation Hardening | No |
Max Operating Temperature | 150 °C |
Drain to Source Voltage (Vdss) | 30 V |
Power Dissipation | 1.79 W |
Drain to Source Resistance | 8.5 mΩ |
Continuous Drain Current (ID) | 8 A |
Element Configuration | Dual |
Number of Channels | 2 |
Packaging | Tape and Reel |
Number of Pins | 8 |
Number of Elements | 2 |
Input Capacitance | 1.276 nF |
Rds On Max | 12 mΩ |
Case/Package | SOIC |
Max Power Dissipation | 1.19 W |
Diodes Incorporated
Small Signal Field-Effect Transistor, 7A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, POWERDI3333-8, 8 PIN
Diodes Incorporated
Power Field-Effect Transistor, 9.8A I(D), 30V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SOP-8