Copyright © 2021 Reliable Distributor of Electronic Components - augswan.com
E-mail: sale@augswan.com
Address: 1305 Room，HuangYuYuan, Futian Street, Shenzhen, China 518031
| RdsOn(Max)@Id | - |
|---|---|
| Vgs(th)(Max)@Id | - |
| Vgs | - |
| FETFeature | Through Hole |
| DraintoSourceVoltage(Vdss) | 1200 V |
| OperatingTemperature | TO-247-3 |
| DriveVoltage(MaxRdsOn | - |
| ProductStatus | Obsolete |
| Package/Case | - |
| GateCharge(Qg)(Max)@Vgs | - |
| Grade | |
| MountingType | - |
| InputCapacitance(Ciss)(Max)@Vds | 175°C (TJ) |
| Series | - |
| Qualification | |
| SupplierDevicePackage | 7209 pF @ 800 V |
| FETType | - |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| Current-ContinuousDrain(Id)@25°C | 100A (Tc) |
| Vgs(Max) | 583W (Tc) |
| MinRdsOn) | 25mOhm @ 50A |
| Package | Tube |
| PowerDissipation(Max) | TO-247AB |
