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| Min Operating Temperature | -55 °C |
|---|---|
| Mount | Surface Mount |
| Fall Time | 20 ns |
| RoHS | Compliant |
| Drain to Source Voltage (Vdss) | 55 V |
| Drain to Source Resistance | 8.4 mΩ |
| Element Configuration | Single |
| Lifecycle Status | Production (Last Updated: 2 years ago) |
| Number of Pins | 3 |
| Height | 4.4 mm |
| Input Capacitance | 3.8 nF |
| Width | 9.25 mm |
| Lead Free | Contains Lead |
| Rds On Max | 6 mΩ |
| Max Power Dissipation | 250 W |
| Drain to Source Breakdown Voltage | 55 V |
| On-State Resistance | 6 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Turn-On Delay Time | 11 ns |
| Max Dual Supply Voltage | 55 V |
| Max Operating Temperature | 175 °C |
| Power Dissipation | 250 W |
| Continuous Drain Current (ID) | 80 A |
| Rise Time | 21 ns |
| Length | 10 mm |
| Turn-Off Delay Time | 60 ns |
| Halogen Free | Halogen Free |
| Packaging | Tape & Reel |
| Package Quantity | 1000 |
| Case/Package | TO-263-3 |
Infineon
Power Field-Effect Transistor, 80A I(D), 40V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, TO-263, 3 PIN
