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IRF520NSTRRPBF

IRF520NSTRRPBF

Infineon Technologies

MOSFET N-CH 100V 9.7A D2PAK

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Products Specifications
Drain to Source Voltage (Vdss):100V
Power Dissipation (Max):3.8W (Ta), 48W (Tc)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type:Surface Mount
Packaging:Tape & Reel (TR)
Supplier Device Package:D2PAK
Vgs(th) (Max) @ Id:4V @ 250µA
Drive Voltage (Max Rds On, Min Rds On):10V
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Detailed Description:N-Channel 100V 9.7A (Tc) 3.8W (Ta), 48W (Tc) Surface Mount D2PAK
FET Feature:-
Moisture Sensitivity Level (MSL):1 (Unlimited)
Email:sale@augswan.com
FET Type:N-Channel
Series:HEXFET®
Current - Continuous Drain (Id) @ 25°C:9.7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds:330pF @ 25V
Vgs (Max):±20V
Rds On (Max) @ Id, Vgs:200 mOhm @ 5.7A, 10V
Technology:MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs:25nC @ 10V
Operating Temperature:-55°C ~ 175°C (TJ)
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