Drain to Source Voltage (Vdss): | 100V |
---|---|
Power Dissipation (Max): | 3.8W (Ta), 48W (Tc) |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Mounting Type: | Surface Mount |
Packaging: | Tape & Reel (TR) |
Supplier Device Package: | D2PAK |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Detailed Description: | N-Channel 100V 9.7A (Tc) 3.8W (Ta), 48W (Tc) Surface Mount D2PAK |
FET Feature: | - |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Email: | sale@augswan.com |
FET Type: | N-Channel |
Series: | HEXFET® |
Current - Continuous Drain (Id) @ 25°C: | 9.7A (Tc) |
Input Capacitance (Ciss) (Max) @ Vds: | 330pF @ 25V |
Vgs (Max): | ±20V |
Rds On (Max) @ Id, Vgs: | 200 mOhm @ 5.7A, 10V |
Technology: | MOSFET (Metal Oxide) |
Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 10V |
Operating Temperature: | -55°C ~ 175°C (TJ) |
International Rectifier
Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, SMD-220, D2PAK-3
International Rectifier
Compliant Contains Lead Tape & Reel (TR) 16 ns 5.6 A 100 V 5.6 A 100 V
International Rectifier
Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3
International Rectifier
Non-Compliant Contains Lead Tape & Reel (TR) 16 ns 5.6 A 100 V 5.6 A 100 V
International Rectifier
Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3