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IRFHM8342TRPBF

IRFHM8342TRPBF

Infineon Technologies

MOSFET N-CH 30V 10A 8PQFN

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Products Specifications
Drain to Source Voltage (Vdss):30V
Power Dissipation (Max):2.6W (Ta), 20W (Tc)
Package / Case:8-PowerTDFN
Mounting Type:Surface Mount
Packaging:Tape & Reel (TR)
Supplier Device Package:8-PQFN (3.3x3.3), Power33
Vgs(th) (Max) @ Id:2.35V @ 25µA
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Detailed Description:N-Channel 30V 10A (Ta) 2.6W (Ta), 20W (Tc) Surface Mount 8-PQFN (3.3x3.3), Power33
FET Feature:-
Moisture Sensitivity Level (MSL):1 (Unlimited)
Email:sale@augswan.com
FET Type:N-Channel
Series:HEXFET®
Current - Continuous Drain (Id) @ 25°C:10A (Ta)
Other Names:IRFHM8342TRPBFTR SP001551976
Input Capacitance (Ciss) (Max) @ Vds:560pF @ 25V
Vgs (Max):±20V
Rds On (Max) @ Id, Vgs:16 mOhm @ 17A, 10V
Technology:MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs:7.5nC @ 4.5V
Operating Temperature:-55°C ~ 150°C (TJ)
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