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| Min Operating Temperature | -40 °C |
|---|---|
| Output Power | 60 W |
| Test Voltage | 28 V |
| Gate to Source Voltage (Vgs) | 12 V |
| Test Current | 550 mA |
| Voltage Rating | 65 V |
| Mount | Surface Mount |
| Current Rating | 10 µA |
| RoHS | Compliant |
| Max Operating Temperature | 200 °C |
| Number of Pins | 3 |
| Frequency | 1.84 GHz |
| Gain | 16.5 dB |
Infineon
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, H-36248-2, 2 PIN
Infineon
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PACKAGE 30275, 4 PIN
