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Part No RN2908FE(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Description TRANS 2PNP PREBIAS 0.1W ES6
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Data sheet

DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 10mA, 5V
Package / Case:SOT-563, SOT-666
Mounting Type:Surface Mount
Packaging:Tape & Reel (TR)
Supplier Device Package:ES6
Resistor - Emitter Base (R2):47 kOhms
Current - Collector (Ic) (Max):100mA
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Detailed Description:Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 100mW Surface Mount ES6
Resistor - Base (R1):22 kOhms
Voltage - Collector Emitter Breakdown (Max):50V
Power - Max:100mW
Moisture Sensitivity Level (MSL):1 (Unlimited)
Frequency - Transition:200MHz
Vce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mA
Other Names:RN2908FE(TE85LF)TR
Transistor Type:2 PNP - Pre-Biased (Dual)
Current - Collector Cutoff (Max):100nA (ICBO)


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