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| Min Operating Temperature | -55 °C |
|---|---|
| Schedule B | 8541290080 |
| Mount | Surface Mount |
| Fall Time | 15 ns |
| RoHS | Compliant |
| Radiation Hardening | No |
| Drain to Source Voltage (Vdss) | 100 V |
| Drain to Source Resistance | 49 mΩ |
| Element Configuration | Dual |
| Number of Channels | 2 |
| Number of Pins | 8 |
| Height | 1.04 mm |
| Number of Elements | 2 |
| Width | 5.89 mm |
| Rds On Max | 49 mΩ |
| Max Power Dissipation | 1.4 W |
| Gate to Source Voltage (Vgs) | 20 V |
| Turn-On Delay Time | 15 ns |
| Weight | 506.605978 mg |
| Max Operating Temperature | 150 °C |
| Power Dissipation | 1.4 W |
| Continuous Drain Current (ID) | 3.8 A |
| Rise Time | 15 ns |
| Length | 4.9 mm |
| Turn-Off Delay Time | 35 ns |
| Case/Package | SOIC |
VISHAY
TRANSISTOR 5.6 A, 30 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, 1212-8, POWERPAK-8, FET General Purpose Power
