Min Operating Temperature | -55 °C |
---|---|
Schedule B | 8541290080 |
Mount | Surface Mount |
Fall Time | 10 ns |
RoHS | Compliant |
Radiation Hardening | No |
Drain to Source Voltage (Vdss) | 30 V |
Drain to Source Resistance | 9.3 mΩ |
Number of Channels | 2 |
Number of Pins | 8 |
Height | 1.04 mm |
Number of Elements | 2 |
Input Capacitance | 1.1 nF |
Width | 5.89 mm |
Lead Free | Lead Free |
Rds On Max | 9.3 mΩ |
Max Power Dissipation | 40 W |
Drain to Source Breakdown Voltage | 30 V |
Gate to Source Voltage (Vgs) | 20 V |
Turn-On Delay Time | 26 ns |
Weight | 506.605978 mg |
Resistance | 9.3 mΩ |
Max Operating Temperature | 150 °C |
Continuous Drain Current (ID) | 30 A |
Rise Time | 17 ns |
Length | 4.9 mm |
Turn-Off Delay Time | 35 ns |
VISHAY
TRANSISTOR 5.6 A, 30 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, 1212-8, POWERPAK-8, FET General Purpose Power
Vishay Intertech
20V 6A 30mΩ@4.5V,7.1A 17.8W 1V@250uA 2 N-Channel PowerPAK 1212-8 MOSFETs ROHS