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| Clock Frequency | 200MHz |
|---|---|
| Surface Mount | YES |
| Density | 2 Gb |
| Memory Type | Volatile |
| Height Seated (Max) | 1.2mm |
| Number of Functions | 1 |
| Package / Case | 60-TFBGA |
| Technology | SDRAM - DDR2 |
| Address Bus Width | 18b |
| Voltage - Supply | 1.7V~1.9V |
| Number of Pins | 60 |
| Operating Mode | SYNCHRONOUS |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Operating Temperature | -40°C~95°C TC |
| HTS Code | 8542.32.00.36 |
| Memory Interface | Parallel |
| Sequential Burst Length | 48 |
| I/O Type | COMMON |
| Mounting Type | Surface Mount |
| Pin Count | 60 |
| Memory Width | 8 |
| Memory Size | 2Gb 256M x 8 |
| Packaging | Tray |
| Terminal Pitch | 0.8mm |
| Organization | 256MX8 |
| Output Characteristics | 3-STATE |
| Access Time | 400ps |
| Terminal Position | BOTTOM |
| Number of Ports | 1 |
| Number of Terminations | 60 |
| Supply Voltage-Max (Vsup) | 1.9V |
| Supply Voltage | 1.8V |
| ECCN Code | EAR99 |
| Lead Free | Lead Free |
| Memory Format | DRAM |
| Qualification Status | Not Qualified |
| RoHS Status | ROHS3 Compliant |
| Nominal Supply Current | 135mA |
| Supply Voltage-Min (Vsup) | 1.7V |
| Additional Feature | AUTO/SELF REFRESH |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Standby Current-Max | 0.012A |
| Refresh Cycles | 8192 |
| Write Cycle Time - Word, Page | 15ns |
| Interleaved Burst Length | 48 |
| Length | 11.5mm |
| Operating Supply Voltage | 1.8V |
| Part Status | Obsolete |
| Published | 2015 |
Winbond Electronics Corporation
DDR DRAM, 16MX16, 0.35ns, CMOS, PBGA84, 8 X 12.50 MM, ROHS COMPLIANT, WBGA-84
