RdsOn(Max)@Id | 4V @ 250µA |
---|---|
Vgs(th)(Max)@Id | ±20V |
Vgs | 131 nC @ 10 V |
FETFeature | 1.92W (Ta), 32.8W (Tc) |
DraintoSourceVoltage(Vdss) | 100 V |
OperatingTemperature | Through Hole |
DriveVoltage(MaxRdsOn | 10V |
ProductStatus | Active |
Package/Case | - |
GateCharge(Qg)(Max)@Vgs | - |
Grade | |
MountingType | TO-220CFM |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | XP10N3R8 |
Qualification | |
SupplierDevicePackage | TO-220-3 Full Pack |
FETType | N-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 67.7A (Ta) |
Vgs(Max) | 6560 pF @ 80 V |
MinRdsOn) | 3.88mOhm @ 35A, 10V |
Package | Tube |
PowerDissipation(Max) | -55°C ~ 150°C (TJ) |