Min Operating Temperature | -55 °C |
---|---|
Gate to Source Voltage (Vgs) | 20 V |
Mount | Surface Mount |
Turn-On Delay Time | 60 ns |
RoHS | Compliant |
Max Operating Temperature | 150 °C |
Drain to Source Voltage (Vdss) | 30 V |
Drain to Source Resistance | 1.2 Ω |
Continuous Drain Current (ID) | 200 mA |
Turn-Off Delay Time | 120 ns |
Packaging | Tape & Reel (TR) |
Number of Pins | 3 |
Input Capacitance | 70 pF |
Rds On Max | 2 Ω |
Case/Package | TO-236-3 |
Max Power Dissipation | 200 mW |
Fuji
Power Field-Effect Transistor, 10A I(D), 60V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, K-PACK(S), 3 PIN