RdsOn(Max)@Id | 5V @ 1mA |
---|---|
Vgs(th)(Max)@Id | ±30V |
Vgs | 34 nC @ 10 V |
FETFeature | 139W (Tc) |
DraintoSourceVoltage(Vdss) | 1000 V |
OperatingTemperature | Through Hole |
DriveVoltage(MaxRdsOn | 10V |
ProductStatus | Obsolete |
Package/Case | |
GateCharge(Qg)(Max)@Vgs | |
Grade | |
MountingType | TO-220 [K] |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | POWER MOS 7® |
Qualification | |
SupplierDevicePackage | TO-220-3 |
FETType | N-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 4A (Tc) |
Vgs(Max) | 694 pF @ 25 V |
MinRdsOn) | 3Ohm @ 2A, 10V |
Package | Tube |
PowerDissipation(Max) | -55°C ~ 150°C (TJ) |