RdsOn(Max)@Id | 100mOhm @ 21A, 10V |
---|---|
Vgs(th)(Max)@Id | 273nC @ 10V |
Vgs | 3.9V @ 3mA |
Configuration | 2 N-Channel (Half Bridge) |
FETFeature | - |
DraintoSourceVoltage(Vdss) | 800V |
OperatingTemperature | Chassis Mount |
ProductStatus | Active |
Package/Case | SP4 |
GateCharge(Qg)(Max)@Vgs | 6761pF @ 25V |
Grade | |
MountingType | SP4 |
InputCapacitance(Ciss)(Max)@Vds | 416W |
Series | - |
Qualification | |
SupplierDevicePackage | |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 42A |
Package | Bulk |
Power-Max | -40°C ~ 150°C (TJ) |