Transition Frequency (fT) | 8GHz |
---|---|
Operating Temperature | +150u2103@(Tj) |
Transistor Type | - |
DC Current Gain (hFE@Ic,Vce) | 100@10mA,8V |
Power Dissipation (Pd) | 250mW |
Collector Current (Ic) | 35mA |
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | - |
Collector-Emitter Breakdown Voltage (Vceo) | 12V |