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| RdsOn(Max)@Id | 2V @ 1mA |
|---|---|
| Vgs(th)(Max)@Id | - |
| Vgs | - |
| FETFeature | - |
| DraintoSourceVoltage(Vdss) | 50 V |
| OperatingTemperature | Through Hole |
| DriveVoltage(MaxRdsOn | - |
| ProductStatus | Obsolete |
| Package/Case | |
| GateCharge(Qg)(Max)@Vgs | |
| Grade | |
| MountingType | TO-92-3 |
| InputCapacitance(Ciss)(Max)@Vds | - |
| Series | - |
| Qualification | |
| SupplierDevicePackage | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Current-ContinuousDrain(Id)@25°C | 170mA (Ta) |
| Vgs(Max) | 40 pF @ 25 V |
| MinRdsOn) | 10Ohm @ 170mA, 10V |
| Package | Bulk |
| PowerDissipation(Max) | - |
INFINEON
Small Signal Field-Effect Transistor, 0.19A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3
Diodes Incorporated
Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3
