RdsOn(Max)@Id | 10Ohm @ 200mA, 4.5V |
---|---|
Vgs(th)(Max)@Id | 0.31nC @ 4.5V |
Vgs | 1.5V @ 250µA |
Configuration | 2 P-Channel (Dual) |
FETFeature | Logic Level Gate |
DraintoSourceVoltage(Vdss) | 25V |
OperatingTemperature | Surface Mount |
ProductStatus | Obsolete |
Package/Case | SuperSOT™-6 |
GateCharge(Qg)(Max)@Vgs | 11pF @ 10V |
Grade | |
MountingType | SOT-23-6 Thin, TSOT-23-6 |
InputCapacitance(Ciss)(Max)@Vds | 700mW |
Series | - |
Qualification | |
SupplierDevicePackage | |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 120mA |
Package | Tape & Reel (TR) |
Power-Max | -55°C ~ 150°C (TJ) |
Fairchild Semiconductor
Small Signal Field-Effect Transistor, 5.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6