RdsOn(Max)@Id | 4V @ 250µA |
---|---|
Vgs(th)(Max)@Id | ±30V |
Vgs | 27 nC @ 10 V |
FETFeature | 38W (Tc) |
DraintoSourceVoltage(Vdss) | 100 V |
OperatingTemperature | Through Hole |
DriveVoltage(MaxRdsOn | 10V |
ProductStatus | Obsolete |
Package/Case | - |
GateCharge(Qg)(Max)@Vgs | - |
Grade | |
MountingType | TO-220F-3 |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | QFET® |
Qualification | |
SupplierDevicePackage | TO-220-3 Full Pack |
FETType | P-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 8.2A (Tc) |
Vgs(Max) | 800 pF @ 25 V |
MinRdsOn) | 290mOhm @ 4.1A, 10V |
Package | Tube |
PowerDissipation(Max) | -55°C ~ 175°C (TJ) |