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FQT4N25TF

FQT4N25TF

onsemi

MOSFET N-CH 250V 830MA SOT223-4

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Products Specifications
RdsOn(Max)@Id5V @ 250µA
Vgs(th)(Max)@Id±30V
Vgs5.6 nC @ 10 V
FETFeature2.5W (Tc)
DraintoSourceVoltage(Vdss)250 V
OperatingTemperatureSurface Mount
DriveVoltage(MaxRdsOn10V
ProductStatusObsolete
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
MountingTypeSOT-223-4
InputCapacitance(Ciss)(Max)@Vds-
SeriesQFET®
Qualification
SupplierDevicePackageTO-261-4, TO-261AA
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C830mA (Tc)
Vgs(Max)200 pF @ 25 V
MinRdsOn)1.75Ohm @ 415mA, 10V
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max)-55°C ~ 150°C (TJ)
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