RdsOn(Max)@Id | 3.7V @ 250µA |
---|---|
Vgs(th)(Max)@Id | ±30V |
Vgs | 8 nC @ 10 V |
FETFeature | 2.5W (Ta), 30W (Tc) |
DraintoSourceVoltage(Vdss) | 500 V |
OperatingTemperature | Through Hole |
DriveVoltage(MaxRdsOn | 10V |
ProductStatus | Obsolete |
Package/Case | - |
GateCharge(Qg)(Max)@Vgs | - |
Grade | |
MountingType | I-PAK |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | QFET® |
Qualification | |
SupplierDevicePackage | TO-251-3 Short Leads, IPak, TO-251AA |
FETType | N-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 1.6A (Tc) |
Vgs(Max) | 230 pF @ 25 V |
MinRdsOn) | 5.3Ohm @ 800mA, 10V |
Package | Tube |
PowerDissipation(Max) | -55°C ~ 150°C (TJ) |
ON Semiconductor
Trans MOSFET N-CH 500V 1.6A 3-Pin(3+Tab) IPAK Rail - Rail/Tube (Alt: FQU2N50BTU-WS)