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G2003A

G2003A

Goford Semiconductor

N190V, 3A,RD<540M@10V,VTH1.0V~3.

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Products Specifications
RdsOn(Max)@Id3V @ 250µA
Vgs(th)(Max)@Id±20V
Vgs12 nC @ 10 V
FETFeature1.8W (Tc)
DraintoSourceVoltage(Vdss)190 V
OperatingTemperatureSurface Mount
DriveVoltage(MaxRdsOn4.5V, 10V
ProductStatusActive
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
MountingTypeSOT-23-3
InputCapacitance(Ciss)(Max)@VdsStandard
SeriesTrenchFET®
Qualification
SupplierDevicePackageTO-236-3, SC-59, SOT-23-3
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C3A (Tc)
Vgs(Max)580 pF @ 25 V
MinRdsOn)540mOhm @ 2A, 10V
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max)-55°C ~ 150°C (TJ)
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