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GT800N10L

GT800N10L

Goford Semiconductor

MOSFET N-CH 100V 3.5A SOT-23-3L

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Products Specifications
RdsOn(Max)@Id3V @ 250µA
Vgs(th)(Max)@Id±20V
Vgs5 nC @ 10 V
FETFeature-
DraintoSourceVoltage(Vdss)-
OperatingTemperature-
DriveVoltage(MaxRdsOn4.5V, 10V
ProductStatusActive
Package/CaseSOT-23-3L
GateCharge(Qg)(Max)@Vgs-
Grade
MountingType-
InputCapacitance(Ciss)(Max)@VdsStandard
Series-
Qualification
SupplierDevicePackageSurface Mount
FETType-
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C3.5A (Tc)
Vgs(Max)209 pF @ 50 V
MinRdsOn)80mOhm @ 2A, 10V
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max)-55°C ~ 150°C (TJ)
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