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| Voltage-CollectorEmitterBreakdown(Max) | 600 V |
|---|---|
| SwitchingEnergy | 55µJ (on), 50µJ (off) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| ProductStatus | Obsolete |
| Package/Case | - |
| Grade | Through Hole |
| MountingType | TO-220-3 |
| ReverseRecoveryTime(trr) | |
| Current-CollectorPulsed(Icm) | |
| Series | - |
| Td(on/off)@25°C | 17ns/96ns |
| Qualification | TO-220-3 |
| SupplierDevicePackage | |
| InputType | Standard |
| Vce(on)(Max)@Vge | 96 A |
| GateCharge | 78 nC |
| Current-Collector(Ic)(Max) | 54 A |
| Ic | 2.7V @ 15V, 12A |
| TestCondition | 390V, 12A, 10Ohm, 15V |
| Package | Tube |
| Power-Max | 167 W |
| IGBTType | - |
Fairchild Semiconductor
Insulated Gate Bipolar Transistor, 45A I(C), 600V V(BR)CES, N-Channel, TO-220AB
