RdsOn(Max)@Id | 5V @ 8mA |
---|---|
Vgs(th)(Max)@Id | ±20V |
Vgs | 335 nC @ 10 V |
FETFeature | 570W (Tc) |
DraintoSourceVoltage(Vdss) | 300 V |
OperatingTemperature | Surface Mount |
DriveVoltage(MaxRdsOn | 10V |
ProductStatus | Active |
Package/Case | |
GateCharge(Qg)(Max)@Vgs | |
Grade | |
MountingType | 24-SMPD |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | GigaMOS™, HiPerFET™, TrenchT2™ |
Qualification | |
SupplierDevicePackage | 24-PowerSMD, 21 Leads |
FETType | N-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 102A (Tc) |
Vgs(Max) | 2800 pF @ 25 V |
MinRdsOn) | 20mOhm @ 60A, 10V |
Package | Tube |
PowerDissipation(Max) | -55°C ~ 150°C (TJ) |