RdsOn(Max)@Id | 215mOhm @ 2.2A, 10V |
---|---|
Vgs(th)(Max)@Id | 15nC @ 10V |
Vgs | 3V @ 250µA |
Configuration | 2 N-Channel (Dual) |
FETFeature | Logic Level Gate |
DraintoSourceVoltage(Vdss) | 80V |
OperatingTemperature | Surface Mount |
ProductStatus | Obsolete |
Package/Case | 8-SOIC |
GateCharge(Qg)(Max)@Vgs | 400pF @ 25V |
Grade | - |
MountingType | 8-SOIC (0.154, 3.90mm Width) |
InputCapacitance(Ciss)(Max)@Vds | 600mW |
Series | - |
Qualification | |
SupplierDevicePackage | - |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 1.1A |
Package | Tape & Reel (TR) |
Power-Max | -55°C ~ 150°C (TJ) |
ON Semiconductor
Power MOSFET 40V 9A 12 mOhm Dual N-Channel SO-8, SOIC-8 Narrow Body, 2500-REEL