RdsOn(Max)@Id | 3mOhm @ 20A, 10V, 0.72mOhm @ 41A, 10V |
---|---|
Vgs(th)(Max)@Id | 9nC, 30nC @ 4.5V |
Vgs | 2V @ 340µA, 2V @ 1mA |
Configuration | 2 N-Channel (Dual) Asymmetrical |
FETFeature | - |
DraintoSourceVoltage(Vdss) | 30V, 25V |
OperatingTemperature | Surface Mount |
ProductStatus | Active |
Package/Case | 8-PQFN (5x6) |
GateCharge(Qg)(Max)@Vgs | 1400pF @ 15V, 5050pF @ 13V |
Grade | - |
MountingType | 8-PowerWDFN |
InputCapacitance(Ciss)(Max)@Vds | 960mW (Ta), 1.04W (Ta) |
Series | - |
Qualification | |
SupplierDevicePackage | - |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 14A (Ta), 30A (Ta) |
Package | Tape & Reel (TR) |
Power-Max | -55°C ~ 150°C (TJ) |