RdsOn(Max)@Id | 2.3V @ 250µA |
---|---|
Vgs(th)(Max)@Id | ±20V |
Vgs | 100 nC @ 10 V |
FETFeature | 2.5W (Ta), 5W (Tc) |
DraintoSourceVoltage(Vdss) | 40 V |
OperatingTemperature | Surface Mount |
DriveVoltage(MaxRdsOn | 4.5V, 10V |
ProductStatus | Active |
Package/Case | - |
GateCharge(Qg)(Max)@Vgs | - |
Grade | |
MountingType | 8-SO |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | TrenchFET® Gen III |
Qualification | |
SupplierDevicePackage | 8-SOIC (0.154, 3.90mm Width) |
FETType | P-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 9.9A (Ta), 14A (Tc) |
Vgs(Max) | 4000 pF @ 20 V |
MinRdsOn) | 14.2mOhm @ 10A, 10V |
Package | Tape & Reel (TR),Cut Tape (CT),Digi-Reel® |
PowerDissipation(Max) | -55°C ~ 150°C (TJ) |