RdsOn(Max)@Id | 2.6V @ 1mA |
---|---|
Vgs(th)(Max)@Id | ±20V |
Vgs | - |
FETFeature | 500mW (Ta) |
DraintoSourceVoltage(Vdss) | 30 V |
OperatingTemperature | Surface Mount |
DriveVoltage(MaxRdsOn | 4V, 10V |
ProductStatus | Active |
Package/Case | - |
GateCharge(Qg)(Max)@Vgs | - |
Grade | |
MountingType | ES6 |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | U-MOSII |
Qualification | |
SupplierDevicePackage | SOT-563, SOT-666 |
FETType | P-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 1.4A (Ta) |
Vgs(Max) | 137 pF @ 15 V |
MinRdsOn) | 251mOhm @ 650mA, 10V |
Package | Tape & Reel (TR),Cut Tape (CT),Digi-Reel® |
PowerDissipation(Max) | 150°C (TJ) |