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TK55D10J1(Q)

TK55D10J1(Q)

MOSFET N-CH 100V 55A TO220

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Products Specifications
RdsOn(Max)@Id2.3V @ 1mA
Vgs(th)(Max)@Id±20V
Vgs110 nC @ 10 V
FETFeature140W (Tc)
DraintoSourceVoltage(Vdss)100 V
OperatingTemperatureThrough Hole
DriveVoltage(MaxRdsOn4.5V, 10V
ProductStatusObsolete
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
MountingTypeTO-220(W)
InputCapacitance(Ciss)(Max)@Vds-
Series-
Qualification
SupplierDevicePackageTO-220-3
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C55A (Ta)
Vgs(Max)5700 pF @ 10 V
MinRdsOn)10.5mOhm @ 27A, 10V
PackageTube
PowerDissipation(Max)150°C (TJ)
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