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| RdsOn(Max)@Id | 4V @ 1mA |
|---|---|
| Vgs(th)(Max)@Id | - |
| Vgs | 225 nC @ 10 V |
| FETFeature | - |
| DraintoSourceVoltage(Vdss) | 1000 V |
| OperatingTemperature | Through Hole |
| DriveVoltage(MaxRdsOn | - |
| ProductStatus | Active |
| Package/Case | - |
| GateCharge(Qg)(Max)@Vgs | - |
| Grade | |
| MountingType | TO-247 [B] |
| InputCapacitance(Ciss)(Max)@Vds | - |
| Series | POWER MOS V® |
| Qualification | |
| SupplierDevicePackage | TO-247-3 |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Current-ContinuousDrain(Id)@25°C | 11A (Tc) |
| Vgs(Max) | 3660 pF @ 25 V |
| MinRdsOn) | 1Ohm @ 500mA, 10V |
| Package | Tube |
| PowerDissipation(Max) | - |
