RdsOn(Max)@Id | 350mOhm @ 950mA, 4.5V |
---|---|
Vgs(th)(Max)@Id | 0.34nC @ 4.5V |
Vgs | 1.2V @ 1.6µA |
Configuration | N and P-Channel |
FETFeature | Logic Level Gate |
DraintoSourceVoltage(Vdss) | 20V |
OperatingTemperature | Surface Mount |
ProductStatus | Obsolete |
Package/Case | PG-SOT363-PO |
GateCharge(Qg)(Max)@Vgs | 47pF @ 10V |
Grade | - |
MountingType | 6-VSSOP, SC-88, SOT-363 |
InputCapacitance(Ciss)(Max)@Vds | 500mW |
Series | OptiMOS™ |
Qualification | |
SupplierDevicePackage | - |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 950mA, 530mA |
Package | Tape & Reel (TR) |
Power-Max | -55°C ~ 150°C (TJ) |
Infineon
Small Signal Field-Effect Transistor, 1.5A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-6
Infineon
Small Signal Field-Effect Transistor, 0.39A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC PACKAGE-6
Infineon
Small Signal Field-Effect Transistor, 0.95A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-6