RdsOn(Max)@Id | - |
---|---|
Vgs(th)(Max)@Id | - |
Vgs | 4V @ 66mA |
Configuration | 2 N-Channel (Half Bridge) |
FETFeature | - |
DraintoSourceVoltage(Vdss) | 1700V (1.7kV) |
OperatingTemperature | Chassis Mount |
ProductStatus | Active |
Package/Case | Module |
GateCharge(Qg)(Max)@Vgs | 30000pF @ 10V |
Grade | - |
MountingType | Module |
InputCapacitance(Ciss)(Max)@Vds | 1800W (Tc) |
Series | - |
Qualification | |
SupplierDevicePackage | - |
Technology | Silicon Carbide (SiC) |
Current-ContinuousDrain(Id)@25°C | 250A (Tc) |
Package | Box |
Power-Max | -40°C ~ 150°C (TJ) |
Infineon
Our well-known 34 mm 600V dual IGBT modules are the right choice for your design. | Summary of Features: Superior solution for frequency controlled