RdsOn(Max)@Id | 2.8V @ 1mA |
---|---|
Vgs(th)(Max)@Id | 40 pF @ 25 V |
Vgs | ±20V |
FETFeature | -55°C ~ 150°C (TJ) |
DraintoSourceVoltage(Vdss) | 100 V |
OperatingTemperature | TO-236AB |
DriveVoltage(MaxRdsOn | 10V |
ProductStatus | Not For New Designs |
Package/Case | - |
GateCharge(Qg)(Max)@Vgs | - |
Grade | |
MountingType | TO-236-3, SC-59, SOT-23-3 |
InputCapacitance(Ciss)(Max)@Vds | 250mW (Ta) |
Series | TrenchMOS™ |
Qualification | |
SupplierDevicePackage | - |
FETType | N-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 150mA (Ta) |
Vgs(Max) | - |
MinRdsOn) | 6Ohm @ 120mA, 10V |
Package | Tape & Reel (TR),Cut Tape (CT),Digi-Reel® |
PowerDissipation(Max) | Surface Mount |
INFINEON
Small Signal Field-Effect Transistor, 0.19A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3
Diodes Incorporated
Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3