RdsOn(Max)@Id | 1.2V @ 250µA |
---|---|
Vgs(th)(Max)@Id | ±8V |
Vgs | 3.2 nC @ 4.5 V |
FETFeature | 790mW (Ta) |
DraintoSourceVoltage(Vdss) | 12 V |
OperatingTemperature | Surface Mount |
DriveVoltage(MaxRdsOn | 1.8V, 4.5V |
ProductStatus | Active |
Package/Case | - |
GateCharge(Qg)(Max)@Vgs | - |
Grade | |
MountingType | X1-DSN1010-4 (Type B) |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | - |
Qualification | |
SupplierDevicePackage | 4-XFBGA, DSBGA |
FETType | N-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 5A (Ta) |
Vgs(Max) | 325 pF @ 6 V |
MinRdsOn) | 28mOhm @ 1A, 10V |
Package | Bulk |
PowerDissipation(Max) | -55°C ~ 150°C (TJ) |