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FDB029N06

FDB029N06

Fairchild Semiconductor

MOSFET N-CH 60V 120A D2PAK

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Products Specifications
RdsOn(Max)@Id4.5V @ 250µA
Vgs(th)(Max)@Id±20V
Vgs151 nC @ 10 V
FETFeature231W (Tc)
DraintoSourceVoltage(Vdss)60 V
OperatingTemperatureSurface Mount
DriveVoltage(MaxRdsOn10V
ProductStatusActive
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
MountingTypeTO-263 (D2PAK)
InputCapacitance(Ciss)(Max)@Vds-
SeriesPowerTrench®
Qualification
SupplierDevicePackageTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C120A (Tc)
Vgs(Max)9815 pF @ 25 V
MinRdsOn)3.1mOhm @ 75A, 10V
PackageBulk
PowerDissipation(Max)-55°C ~ 175°C (TJ)
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