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| Voltage-CollectorEmitterBreakdown(Max) | 100nA (ICBO) |
|---|---|
| VceSaturation(Max)@Ib | 20 @ 10mA, 5V |
| OperatingTemperature | 50 V |
| ProductStatus | Obsolete |
| Package/Case | - |
| TransistorType | NPN |
| Grade | |
| MountingType | 300 mW |
| Current-CollectorCutoff(Max) | 150°C (TJ) |
| Series | - |
| DCCurrentGain(hFE)(Min)@Ic | Through Hole |
| Frequency-Transition | 100 mA |
| Qualification | |
| SupplierDevicePackage | - |
| Vce | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Current-Collector(Ic)(Max) | 300mV @ 500µA, 10mA |
| Ic | 250MHz |
| Package | Cut Tape (CT),Tape & Box (TB) |
| Power-Max | TO-92-3 |
