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| RdsOn(Max)@Id | 4V @ 250µA |
|---|---|
| Vgs(th)(Max)@Id | ±30V |
| Vgs | 17 nC @ 10 V |
| FETFeature | 2.5W (Ta), 38W (Tc) |
| DraintoSourceVoltage(Vdss) | 60 V |
| OperatingTemperature | Surface Mount |
| DriveVoltage(MaxRdsOn | 10V |
| ProductStatus | Obsolete |
| Package/Case | |
| GateCharge(Qg)(Max)@Vgs | |
| Grade | |
| MountingType | TO-252AA |
| InputCapacitance(Ciss)(Max)@Vds | - |
| Series | QFET® |
| Qualification | |
| SupplierDevicePackage | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Current-ContinuousDrain(Id)@25°C | 9.4A (Tc) |
| Vgs(Max) | 550 pF @ 25 V |
| MinRdsOn) | 185mOhm @ 4.7A, 10V |
| Package | Tape & Reel (TR) |
| PowerDissipation(Max) | -55°C ~ 150°C (TJ) |
ON Semiconductor
Power Field-Effect Transistor, 9.4A I(D), 100V, 0.29ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
