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| RdsOn(Max)@Id | 4V @ 10mA |
|---|---|
| Vgs(th)(Max)@Id | +25V, -10V |
| Vgs | 58 nC @ 20 V |
| FETFeature | 142W (Tc) |
| DraintoSourceVoltage(Vdss) | 1200 V |
| OperatingTemperature | Chassis Mount |
| DriveVoltage(MaxRdsOn | 20V |
| ProductStatus | Active |
| Package/Case | - |
| GateCharge(Qg)(Max)@Vgs | - |
| Grade | |
| MountingType | SOT-227 |
| InputCapacitance(Ciss)(Max)@Vds | - |
| Series | - |
| Qualification | |
| SupplierDevicePackage | SOT-227-4, miniBLOC |
| FETType | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Current-ContinuousDrain(Id)@25°C | 30A (Tc) |
| Vgs(Max) | 1374 pF @ 1000 V |
| MinRdsOn) | 100mOhm @ 20A, 20V |
| Package | Tube |
| PowerDissipation(Max) | -55°C ~ 175°C (TJ) |
