RdsOn(Max)@Id | 3.5V @ 90µA |
---|---|
Vgs(th)(Max)@Id | ±16V |
Vgs | 10.5 nC @ 10 V |
FETFeature | 43W (Tc) |
DraintoSourceVoltage(Vdss) | 700 V |
OperatingTemperature | Through Hole |
DriveVoltage(MaxRdsOn | 10V |
ProductStatus | Active |
Package/Case | - |
GateCharge(Qg)(Max)@Vgs | - |
Grade | |
MountingType | PG-TO251-3 |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | CoolMOS™ P7 |
Qualification | |
SupplierDevicePackage | TO-251-3 Short Leads, IPak, TO-251AA |
FETType | N-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 8.5A (Tc) |
Vgs(Max) | 364 pF @ 400 V |
MinRdsOn) | 600mOhm @ 1.8A, 10V |
Package | Tube |
PowerDissipation(Max) | -40°C ~ 150°C (TJ) |